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BGA 425
Si-MMIC-Amplifier
Preliminary data * Multifunctional casc. 50 block (LNA / MIX) * Unconditionally stable * Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (appl.2)
in SIEGET(R) 25-Technologie
3 4
IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)
* Noise figure NF = 2.2 dB at 1.8 GHz * Reverse isolation >28 dB (appl.1) >35 dB (appl.2) * typical device voltage VD = 2 V to 5 V Tape loading orientation
Circuit Diagram
2 1
VPS05605
6
+V
3
OUTA
1 IN 4
OUTB
2, 5
ESD: Electrostatic discharge sensitive device, observe handling precaution!
GND
EHA07371
PIN Configuration
Type BGA 425
Marking Ordering Code BMs Q62702-G0058
Package 1, Out B SOT-343 4, IN
2, GND 5, GND
3, Out A 6, +V
Maximum Ratings Parameter Device current Device voltage Total power dissipation, T S tbd C Symbol Value 25 6 150 -10 150 -65 ...+150 -65 ...+150 Unit mA V mW dBm C
ID VD,+V Ptot PRFin Tj TA T stg
1)
RF input power
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point
RthJS
tbd
K/W
1) TS is measured on the ground lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Jul-14-1998 1998-11-01
BGA 425
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3V, Z o = 50, Testfixture Appl.1 Device current Insertion power gain f = 0.1 GHz f = 1 GHz typ. 9.5 27 22 18.5 28 max. 10.5 -
Unit
ID
|S21| 2
8.5 -
mA dB
f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz
Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz
S12
-
NF
1.9 2 2.2 +7 >13 >7 dBm dB
IP 3out RL in RL out
-
Semiconductor Group Semiconductor Group
22
Jul-14-1998 1998-11-01
BGA 425
Typical configuration Application 1 - 3 (LNA) Application 4 (Mix) Appl.1
100 pF RF OUT
Appl.2
2.2 pF
BGA 425
BGA 425 100 pF 100 pF RF IN RF OUT 100 nH
100 pF RF IN 10 nF +3 V
EHA07372
100 pF
10 nF +3 V
100 pF
EHA07373
Appl.3
100 pF RF OUT 100 pF
Appl.4
1 nF LO 33
BGA 425
47 pF
22 nH
BGA 425 47 pF 100 pF
10 nF 100 pF
100 pF RF IN
IF 180 nH
RF
+3 V
EHA07374
10 nF +V
100 pF
EHA07375
Note: 1) Large-value capacitors should be connected from pin 6 to ground right at the device to provide a low impedance path! (appl. 1) 2) The use of plated through holes right at pin 2 and 5 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! 3) For more information please see application note 028 and 030.
Semiconductor Group Semiconductor Group
33
Jul-14-1998 1998-11-01
BGA 425
Electrical characteristics at T A = 25 C, unless otherwise specified. VD = 3 V Application 1 to 4
Applic. Insertion Gain |S21 |2 (dB) Frequ. (GHz) Noise Figure Reverse Isol. Return Loss Return Loss
NF (dB)
S12 (dB)
Input RLin (dB) Output RLout (dB) Frequ. (GHz) Frequ. (GHz)
Frequ. (GHz) Frequ. (GHz)
0.1
1 (LNA)
1 22 22 20
1.8
0.1 1
1.8 0.1 2.2 46
1 32 35 30
1.8 0.1 28 37 26 19 13 8
1 19 15 10
1.8 0.1 18 8 14 10 5 15
1 12 10 17
1.8 13 11 *) 11
27 10 24
18.5 1.9 2 22 16 -
2 (LNA)
1.9 2.1 35 2.2 34
3 (LNA)
1.9 2
4 (MIX)
e.g.: RF = 900 MHz, IF = 100 MHz, VD = 3 V Conversion gain: 20 dB Intercept point output: 0 dBm Noise figure: < 5 dB LO-power: +3 dBm
*) 2.2 pF by-pass capacitance and 100 nH bias-inductance
Semiconductor Group Semiconductor Group
44
Jul-14-1998 1998-11-01
BGA 425
For linear simulation please use on-wafer measurement data of our T501 chip an add resistive and capacitive elements, parasitics and package equivalent circuit.
S-Parameters at T A = 25 C (On-wafer measurement data T501)
f
GHz
S11
MAG ANG MAG
S21
ANG MAG
S12
ANG MAG
S22
ANG
T1, VCE = 1.7 V, IC = 4.7 mA 0.1 0.7996 -8 11.8466 0.3 0.8223 -15.5 11.9814 0.5 0.8294 -26.3 11.9702 0.7 0.8162 -34.4 11.4624 0.9 0.81 -44.5 11.1452 1.1 0.793 -52.8 10.739 1.3 0.7884 -61.8 10.3219 1.5 0.7651 -69.1 9.7368 1.7 0.7534 -75.9 9.3137 1.9 0.74 -81.8 8.8247 2.1 0.7391 -88.4 8.4426 2.3 0.7335 -96 8.089 2.5 0.7186 -98.4 7.6674 2.7 0.7193 -103.1 7.3034 2.9 0.702 -108 6.7988 3.1 0.6897 -112.6 6.4921
T2, VCE = 2.2 V, IC = 4.7 mA 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0.8144 0.8094 0.8251 0.8171 0.7957 0.7952 0.7953 0.767 0.7618 0.7384 0.739 0.7285 0.718 0.7294 0.6955 0.6868 -8.3 -15.3 -25.8 -34.4 -44.9 -52.5 -61.9 -68.6 -75.5 -81.3 -88.7 -95.8 -97.9 -102.9 -107.8 -111.9 11.9941 12.1389 12.1376 11.6229 11.3048 10.8874 10.4735 9.8866 9.4501 8.9757 8.5788 8.2231 7.7991 7.429 6.9444 6.6064
172.4 169 162.6 156.8 149.5 144.6 138.9 134 130.2 126 121.9 118 115.5 113.2 109.9 107.4
0.0111 0.0126 0.0163 0.019 0.0208 0.0281 0.0332 0.0373 0.0383 0.0404 0.0417 0.0451 0.0465 0.049 0.0492 0.0501
118 90.9 75.9 72.4 64.7 62.4 58.2 54 49.3 45.6 44.1 41.6 40.8 40 37 36.7
0.9942 0.9853 0.9675 0.9529 0.9286 0.9094 0.8842 0.8523 0.8221 0.7939 0.7721 0.7476 0.7339 0.716 0.6885 0.6743
0 -5.7 -9.6 -13.5 -17.2 -20.4 -23.5 -25.9 -28.2 -30.2 -32.7 -34.5 -35.7 -37.3 -38.6 -39.7
172.1 169 162.7 157 149.7 144.8 139.2 134.3 130.5 126.3 122.1 118.2 115.5 113.4 110 107.6
0.0154 0.01 0.0129 0.0183 0.0227 0.0261 0.0307 0.0325 0.0361 0.0374 0.04 0.0416 0.0463 0.043 0.0468 0.0481
129.2 80.7 76.3 70.8 70.7 64.2 60.7 54 48 49.2 44.3 39.7 40.4 38.8 35.7 34.2
0.985 0.9906 0.9728 0.9557 0.9375 0.9147 0.8916 0.8595 0.8322 0.8019 0.7857 0.7625 0.7467 0.7273 0.7077 0.689
-0.5 -5.6 -0.1 -12.7 -16 -19 -22.4 -24.5 -26.6 -28.6 -30.9 -32.9 -33.7 -35.8 -36.7 -37.6
Semiconductor Group Semiconductor Group
55
Jul-14-1998 1998-11-01
BGA 425
Spice model
BGA 425-chip including parasitics +V 16 11 OUTB
R2
R5
T2
R1
R3
C'-E'Diode
13
OUTA
RF IN
14
C1
T1
C P3
C P4
C P5
R4
C P1
C P2
12, 15 GND
EHA07376
T1 T2 R1 R2 R3 R4 R5 RP1 C1 CP1 CP2 CP3 CP4
T501 T501 14.5k 280 2.4k 170 22 1k 2.3pF 0.2pF 0.2pF 0.6pF
0.1pF 0.1pF CP5 C'-E'-diode T1
Semiconductor Group Semiconductor Group
66
Jul-14-1998 1998-11-01
BGA 425
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =
0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3
aA V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469
A A V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300
fA fA mA V fF V eV K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
-
RS =
20
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
C 12
C 21
L BO2
RF IN
L BI2 C 11 L BI1
C'-E'Diode
14 16 BGA 425 Chip 12, 15
13 11
L CI2 L CI1 C 22
L CO2
OUTA
L BO1
+V
L CO1
OUTB
C BE2
C BE1 L EI
C CE1
C CE2
L EO
GND
EHA07377
Extracted on behalf of SIEMENS Small Signal Semiconductors by Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG
L BI1 = L BI2 = L BO1 = L BO2 = L EI = L EO = L CI1 = L CI2 = L CO1 = L CO2 = C BE1 = C BE2 = C CE1 = C CE2 = C 11 = C 22 = C 12 = C 21 =
0.4 0.7 0.3 0.3 0.3 0.1 0.4 0.4 0.3 0.3 200 200 200 200 5 5 50 50
nH nH nH nH nH nH nH nH nH nH fF fF fF fF fF fF fF fF
Valid up to 3GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 77
Jul-14-1998 1998-11-01
BGA 425
Insertion power gain |S 21| 2 = f (f)
Noise figure NF = f (f)
VD, I D = parameter
35
VD,ID = parameter
5.0
dB
VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA
dB
4.0 3.5
|S 21|2
25
VD=5V, ID=17.5mA VD=3V, ID=9.5mA
NF
20 15 10 5 0 -1 10
0 1
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -1 10
0 1
10
GHz
10
10
GHz
10
f
f
Intercept point at the output
IP 3out = f (f) VD,ID = parameter
20
dBm
16 14 12 10 8 6 4 2 0 -1 10
VD=5V, ID=17.5mA VD=4V, ID=13,3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA
IP3out
10
0
GHz
10
1
f
Semiconductor Group Semiconductor Group
88
Jul-14-1998 1998-11-01

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